CoolGaN™ G3 Transistors

Infineon Technologies CoolGaN™ G3 Transistors are designed to deliver superior performance in high-power density applications. These transistors feature a very low on-state resistance, enabling efficient power conversion and reduced energy losses. Available in four voltage options (60V, 80V, 100V, or 120V), the Infineon CoolGaN G3 Transistors deliver ultra-fast switching with an ultra-low gate/output charge. The transistors are housed in compact PQFN packages, which enhance thermal management and support dual-side cooling, ensuring reliable operation even under demanding conditions. These features make CoolGaN G3 Transistors a top choice for applications such as telecom, data center power supplies, and industrial power systems.

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選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 120 V G3 in PQFN 3x5, 2.7 mohm 8,919庫存量
最少: 1
倍數: 1
: 5,000

SMD/SMT 1 Channel 120 V 71 A 3.7 mOhms 6.5 V 2.9 V 13 nC - 40 C + 150 C 45 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 100 V G3 in PQFN 3x3, 5 mohm 3,840庫存量
最少: 1
倍數: 1
: 5,000

SMD/SMT 1 Channel 100 V 38 A 7 mOhms 6.5 V 2.9 V 6.1 nC - 40 C + 150 C 23 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm 3,399庫存量
最少: 1
倍數: 1
: 5,000

SMD/SMT 1 Channel 100 V 23 A 11 mOhms 6.5 V 2.9 V 3.4 nC - 40 C + 150 C 15 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm 3,577庫存量
最少: 1
倍數: 1
: 5,000

SMD/SMT 1 Channel 60 V 99 A 1.9 mOhms 6.5 V 2.9 V 13 nC - 40 C + 150 C 45 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 80 V G3 in PQFN 3x5, 1.8 mohm 6,355庫存量
最少: 1
倍數: 1
: 5,000

SMD/SMT 1 Channel 80 V 86 A 2.5 mOhms 6.5 V 2.9 V 12 nC - 40 C + 150 C 45 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 MV GAN DISCRETES 2,250庫存量
最少: 1
倍數: 1
: 5,000

SMD/SMT PG-VSON-4 HEMT 1 Channel 100 V 23 A - 4 V, + 5.5 V 2.9 V 3.4 nC - 40 C + 150 C 15 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 MV GAN DISCRETES 5,415庫存量
最少: 1
倍數: 1
: 5,000

SMD/SMT PG-VSON-6 HEMT 1 Channel 100 V 76 A 3.3 mOhms - 4 V, + 5.5 V 2.9 V 11 nC - 40 C + 150 C 45 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 MV GAN DISCRETES 1,225庫存量
10,000預期23/2/2026
最少: 1
倍數: 1
: 5,000

SMD/SMT PG-TSON-6 HEMT 1 Channel 100 V 76 A 3.3 mOhms - 4 V, + 5.5 V 2.9 V 11 nC - 40 C + 150 C 45 W Enhancement CoolGaN