750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [RDS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (ID) and source current (IS) (TC=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.

結果: 23
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最高工作溫度 Pd - 功率消耗 通道模式 資格
ROHM Semiconductor 碳化矽MOSFET TO247 750V 105A N-CH SIC 402庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO263 750V 51A N-CH SIC 2,008庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO247 750V 56A N-CH SIC 635庫存量
最少: 1
倍數: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO247 750V 56A N-CH SIC 375庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO263 750V 31A N-CH SIC 1,946庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TOLL 750V 120A SIC 1,000庫存量
最少: 1
倍數: 1
: 2,000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 120 A 4.8 V 170 nC + 175 V 405 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TOLL 750V 80A SIC 500庫存量
最少: 1
倍數: 1
: 2,000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 80 A 4.8 V 123 nC + 175 V 277 W Enhancement
ROHM Semiconductor 碳化矽MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 450庫存量
最少: 1
倍數: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor 碳化矽MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 430庫存量
最少: 1
倍數: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 700庫存量
最少: 1
倍數: 1
: 1,000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 38 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 115 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET TOLL 750V 26A SIC 784庫存量
最少: 1
倍數: 1
: 2,000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 26 A 4.8 V 48 nC + 175 V 100 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TOLL 750V 61A SIC 100庫存量
最少: 1
倍數: 1
: 2,000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 61 A 4.8 V 94 nC + 175 V 214 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO263 750V 51A N-CH SIC 1,460庫存量
最少: 1
倍數: 1
最大: 100
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO263 750V 31A N-CH SIC 3,032庫存量
最少: 1
倍數: 1
最大: 100
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 45 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO247 750V 105A N-CH SIC 615庫存量
最少: 1
倍數: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO263 750V 98A N-CH SIC 344庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 98 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 267 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO247 750V 34A N-CH SIC 588庫存量
最少: 1
倍數: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO247 750V 34A N-CH SIC 321庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TOLL 750V 37A SIC 8庫存量
2,000預期17/7/2026
最少: 1
倍數: 1
: 2,000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 37 A 4.8 V 63 nC + 175 V 133 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TOLL 750V 46A SIC
2,000預期16/7/2026
最少: 1
倍數: 1
最大: 100
: 2,000

SMD/SMT TOLL-9 N Channel 1 Channel 750 V 46 A 4.8 V 72 nC + 175 V 164 W Enhancement
ROHM Semiconductor 碳化矽MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
450預期14/5/2026
最少: 1
倍數: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor 碳化矽MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
450預期14/5/2026
最少: 1
倍數: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 750V, 45mO, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
1,000預期14/5/2026
最少: 1
倍數: 1
最大: 100
: 1,000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 22 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 71 W Enhancement