SCT4062KWAHRTL

ROHM Semiconductor
755-SCT4062KWAHRTL
SCT4062KWAHRTL

製造商：

說明：
碳化矽MOSFET TO263 1.2KV 24A N-CH SIC

規格書:
ECAD模型:
下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。
更多資訊
瞭解更多關於ROHM Semiconductor SCT4062KWAHRTL的資訊

庫存量: 1,488

庫存：
1,488 可立即送貨
工廠前置作業時間：
27 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個1000）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$93.30 HK$93.30
HK$66.17 HK$661.70
HK$56.22 HK$5,622.00
完整捲（訂購多個1000）
HK$47.68 HK$47,680.00
HK$46.11 HK$92,220.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: 碳化矽MOSFET
RoHS:  
SMD/SMT
TO-263-7LA
N-Channel
1 Channel
1.2 kV
24 A
81 mOhms
- 4 V, + 21 V
4.8 V
64 nC
+ 175 C
93 W
Enhancement
品牌: ROHM Semiconductor
配置: Single
下降時間: 10 ns
互導 - 最小值: 6.5 S
封裝: Reel
封裝: Cut Tape
封裝: MouseReel
產品: MOSFET's
產品類型: SiC MOSFETS
上升時間: 11 ns
原廠包裝數量: 1000
子類別: Transistors
技術: SiC
晶體管類型: 1 N-Channel
標準斷開延遲時間: 22 ns
標準開啟延遲時間: 4.4 ns
找到產品:
若要顯示類似商品，請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

規格書

Specification Sheets

此功能需要啟用JavaScript。

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SCT4062KWAHR AEC-Q101 N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4062KWAHR AEC-Q101 N-Channel Silicon Carbide (SiC) Power MOSFET is a high-performance, automotive-grade device for use in demanding automotive environments. The ROHM SCT4062KWAHR features a high drain-source voltage rating of 1200V and a continuous drain current of 24A (at +25°C), making the MOSFET well-suited for high-voltage, high-efficiency power conversion systems. With a typical on-resistance of 62mΩ, the SCT4062KWAHR minimizes conduction losses and supports fast switching, which contributes to reduced power loss and improved thermal performance. Packaged in a TO-263-7LA format, the device offers excellent heat dissipation and ease of integration into compact power modules. SCT4062KWAHR is ideal for electric vehicle (EV) applications such as traction inverters, onboard chargers, and DC-DC converters, where reliability, efficiency, and thermal stability are critical.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

發生意外的錯誤。


有問題嗎？ 請瀏覽幫助中心。
有關特定訂單的問題，請登入您的帳戶。

如有其他問題，請致電800-346-6873或發送郵件至 help@mouser.com 與我們聯絡。