結果: 14
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
STMicroelectronics MOSFET N-Ch 600V 0.097 Ohm 29A Fdmesh II FD 668庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 29 A 110 mOhms - 25 V, 25 V 3 V 80.4 nC - 55 C + 150 C 190 W Enhancement Tube
STMicroelectronics MOSFET N-channel 600V, 10A FDMesh II 508庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10 A 450 mOhms - 25 V, 25 V 3 V 30 nC - 55 C + 150 C 90 W Enhancement FDmesh Tube
STMicroelectronics MOSFET N-Ch 600 Volt 20 Amp 5,400庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 290 mOhms - 30 V, 30 V 3 V 54 nC - 65 C + 150 C 192 W Enhancement FDmesh Tube
STMicroelectronics MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR 946庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 600 mOhms - 25 V, 25 V 3 V 20 nC - 55 C + 150 C 25 W Enhancement Tube
STMicroelectronics MOSFET N-Ch Power Mosfet 600V 0.097 Ohm 29A 1,190庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 29 A 110 mOhms - 25 V, 25 V 2 V 84 nC - 55 C + 150 C 250 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp 375庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 20 A 250 mOhms - 30 V, 30 V 3 V 56 nC - 65 C + 150 C 192 W Enhancement FDmesh Tube

STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp 520庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 20 A 250 mOhms - 30 V, 30 V 3 V 53 nC - 65 C + 150 C 214 W Enhancement FDmesh Tube
STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp 2,058庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 20 A 250 mOhms - 30 V, 30 V 5 V 38 nC - 65 C + 150 C 192 W Enhancement FDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR 857庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 8 A 600 mOhms - 25 V, 25 V 2 V 19 nC - 55 C + 150 C 70 W Enhancement Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II FD 169庫存量
600預期5/3/2026
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 29 A 110 mOhms - 25 V, 25 V 3 V 80.4 nC - 55 C + 150 C 190 W Enhancement Tube
STMicroelectronics MOSFET N-Ch, 600V-0.37ohms FDMesh 10A 107庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10 A 450 mOhms - 25 V, 25 V 4 V 30 nC - 55 C + 150 C 90 W Enhancement FDmesh Tube

STMicroelectronics MOSFET N-Ch 600 Volt 20 Amp 235庫存量
600預期10/2/2026
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 290 mOhms - 30 V, 30 V 3 V 37 nC - 65 C + 150 C 214 W Enhancement FDmesh Tube
STMicroelectronics MOSFET N-channel 600V, 10A FDMesh II 無庫存前置作業時間 14 週
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 10 A 450 mOhms - 25 V, 25 V 3 V 30 nC - 55 C + 150 C 90 W Enhancement FDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II 無庫存前置作業時間 14 週
最少: 1,000
倍數: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 29 A 110 mOhms - 25 V, 25 V 3 V 80.4 nC - 55 C + 150 C 190 W Enhancement Tube