TP65H070G4PS

Name: Renesas Electronics TP65H070G4PS
Brand: Renesas Electronics
SKU: 227-TP65H070G4PS
Price: 61.73 HKD
Availability: InStock

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Mouser 編號：

227-TP65H070G4PS

製造商編號：

TP65H070G4PS

製造商：

Renesas Electronics

說明：

氮化鎵場效應管 650V, 70mohm GaN FET in TO220

規格書:

TP65H070G4PS 規格書 (PDF)

ECAD模型:

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庫存量: 1,215

庫存：: 1,215 可立即送貨

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工廠前置作業時間：: 14 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$61.73	HK$61.73
	HK$33.29	HK$332.90
	HK$30.58	HK$3,058.00
	HK$25.89	HK$12,945.00
完整捲（訂購多個1000）
	HK$25.89	HK$25,890.00

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商品屬性	屬性值	選擇屬性
製造商:	Renesas Electronics
產品類型:	氮化鎵場效應管
RoHS:
安裝風格:	Through Hole
封裝/外殼:	TO-220-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	29 A
Rds On - 漏-源電阻:	85 mOhms
Vgs - 閘極-源極電壓:	- 20 V, + 20 V
Vgs th - 門源門限電壓 :	4.7 V
Qg - 閘極充電:	9 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	96 W
通道模式:	Enhancement
公司名稱:	SuperGaN
品牌:	Renesas Electronics
下降時間:	7.2 ns
封裝:	Reel
封裝:	Cut Tape
產品類型:	GaN FETs
上升時間:	6.2 ns
系列:	Gen IV SuperGaN
原廠包裝數量:	1000
子類別:	Transistors
技術:	GaN
標準斷開延遲時間:	56 ns
標準開啟延遲時間:	43.4 ns

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規格書

TP65H070G4PS 規格書 (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

TP65H070G4PS 650V SuperGaN® GaN FET

Renesas Electronics TP65H070G4PS 650V SuperGaN^® Gallium Nitride (GaN) FET is a 650V, 70mΩ normally-off device offering superior quality and performance. The TP65H070G4PS combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies in a three-lead TO-220 package. Operating within a -55°C to +150°C temperature range, this component features 26W maximum power dissipation, an 18.4A to 29A maximum continuous drain current range, and 120A pulsed drain current (maximum). The Gen IV SuperGaN platform from Renesas Electronics uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.