STPSC30G12 Silicon Carbide Power Schottky Diodes

STMicroelectronics STPSC30G12 Silicon Carbide Power Schottky Diodes are in a DO-247 package with long leads. The STMicroelectronics STPSC30G12 is an ultrahigh performance power Schottky rectifier manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200V rating. Thanks to the Schottky construction, no recovery is shown during turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.