ADPA1112 GaN Power Amplifiers

Analog Devices ADPA1112 Gallium Nitride (GaN) Power Amplifiers are 15W, 1GHz to 22GHz wideband power amplifiers. The ADI ADPA1112 amplifiers feature a saturated output power (P_OUT) of 42dBm, power added efficiency (PAE) of 25%, and a power gain of 14dB typical from 8GHz to 16GHz at input power (P_IN) of 28.0dBm. The RF input and RF output are internally matched and AC-coupled. A drain bias voltage (V_DD) of 28V is applied to the VDD1 and VDD2 pins, which have integrated bias inductors. The drain current is set by applying a negative voltage to the VGG1 pin. A temperature-compensated RF detector is integrated, allowing monitoring of the RF output power. These GaN-processed devices operate within a -40°C to +85°C range.