NDSH20120C

onsemi
863-NDSH20120C
NDSH20120C

製造商：

說明：
碳化矽肖特基二極管 SIC DIODE GEN2.0 1200V TO

規格書:
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庫存量: 174

庫存：
174 可立即送貨
工廠前置作業時間：
13 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$74.31 HK$74.31
HK$51.21 HK$512.10
HK$40.94 HK$4,094.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽肖特基二極管
RoHS:  
REACH - SVHC:
Through Hole
TO-247-2
Single
20 A
1.2 kV
1.38 V
119 A
200 uA
- 55 C
+ 175 C
NDSH20120C
Tube
品牌: onsemi
Pd - 功率消耗 : 214 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 450
子類別: Diodes & Rectifiers
公司名稱: EliteSiC
Vr - 反向電壓: 1.2 kV
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所選屬性: 0

規格書

PCN

CNHTS:
8541100000
USHTS:
8541290095
ECCN:
EAR99

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH20120C Silicon Carbide (SiC) Diodes

onsemi NDSH20120C Silicon Carbide (SiC) Diodes provide superior switching performance and higher reliability than silicon. The onsemi NDSH20120C features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

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