TGF3015-SM

Qorvo
772-TGF3015-SM
TGF3015-SM

製造商:

說明:
氮化鎵場效應管 .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 91

庫存:
91 可立即送貨
工廠前置作業時間:
20 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$708.15 HK$708.15
HK$508.08 HK$12,702.00
HK$460.16 HK$46,016.00

商品屬性 屬性值 選擇屬性
Qorvo
產品類型: 氮化鎵場效應管
RoHS:  
SMD/SMT
QFN-EP-16
N-Channel
32 V
557 mA
15.3 W
品牌: Qorvo
配置: Single
開發套件: TGF3015-SM-EVB1
增益: 17.1 dB
最大工作頻率: 3 GHz
最低工作頻率: 30 MHz
濕度敏感: Yes
輸出功率: 11 W
封裝: Tray
產品類型: GaN FETs
系列: TGF3015
原廠包裝數量: 100
子類別: Transistors
技術: GaN
晶體管類型: HEMT
Vgs - 閘極-源極擊穿電壓: - 2.7 V
零件號別名: TGF3015 1120419
每件重量: 6.745 g
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8541290000
CAHTS:
8542330000
USHTS:
8542390090
JPHTS:
8542330996
KRHTS:
8532331000
MXHTS:
8542330201
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

TGF3015-SM GaN HEMT

TriQuint's TGF3015-SM is a 10W (P3dB), 50ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3x3mm package that saves real estate of already space-constrained handheld radios.
Learn More