安森美半導體Trench8 MOSFET具有低最大導通電阻(RDS(ON)、超低柵極電荷(Qg)和低(Qg) x RDS(ON),即功率轉換應用中使用的MOSFET的關鍵品質因數 (FOM)。Trench8 MOSFET具有基於T6技術的優化開關性能,與Trench6系列相比,QG和Qoss降低了35%至40%。
N-Channel 80V Automotive Power MOSFET
onsemi N-Channel 80V Automotive Power MOSFET is available in an 8mm x 8mm flat-lead package ideal for compact and efficient designs. The single N-Channel 80V device features a 1.1mΩ RDS(on) drain-source on-resistance. The MOSFET includes a wettable flank option available for enhanced optical inspection. The onsemi N-Channel 80V Automotive Power MOSFET is also AEC-Q101-qualified and PPAP-capable, making it suitable for automotive applications.