NVHL060N065SC1

onsemi
863-NVHL060N065SC1
NVHL060N065SC1

製造商:

說明:
碳化矽MOSFET SIC MOS TO247-3L 650V

ECAD模型:
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庫存量: 445

庫存:
445 可立即送貨
工廠前置作業時間:
8 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$127.99 HK$127.99
HK$90.34 HK$903.40
HK$76.94 HK$9,232.80

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽MOSFET
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
47 A
44 mOhms
- 8 V, + 22 V
4.3 V
74 nC
- 55 C
+ 175 C
176 W
Enhancement
EliteSiC
品牌: onsemi
配置: Single
下降時間: 8 ns
互導 - 最小值: 2 S
封裝: Tube
產品類型: SiC MOSFETS
上升時間: 32 ns
系列: NVHL060N065SC1
原廠包裝數量: 30
子類別: Transistors
技術: SiC
標準斷開延遲時間: 23 ns
標準開啟延遲時間: 12 ns
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所選屬性: 0

USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

NVHL060N065SC1 EliteSiC MOSFET

onsemi NVHL060N065SC1 EliteSiC MOSFET is a 650V, 60mΩ (typ), and 47A single N-channel MOSFET built with a compact and efficient design for high thermal performance. This MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. The NVHL060N065SC1 power MOSFET offers high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. This MOSFET is AEC-Q101 qualified and is PPAP-capable. Typical applications include automotive onboard chargers and automotive DC/DC converters for Electric Vehicles (EV).