IPW60R037CSFDXKSA1

Infineon Technologies
726-IPW60R037CSFDXKS
IPW60R037CSFDXKSA1

製造商:

說明:
MOSFET HIGH POWER_NEW

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 197

庫存:
197 可立即送貨
工廠前置作業時間:
12 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$75.87 HK$75.87
HK$44.72 HK$447.20
HK$37.89 HK$3,789.00
HK$35.35 HK$16,968.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
54 A
37 mOhms
- 20 V, 20 V
3.5 V
136 nC
- 55 C
+ 150 C
245 W
Enhancement
Tube
品牌: Infineon Technologies
配置: Single
下降時間: 6 ns
產品類型: MOSFETs
上升時間: 30 ns
原廠包裝數量: 240
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 196 ns
標準開啟延遲時間: 53 ns
零件號別名: IPW60R037CSFD SP001927820
每件重量: 6 g
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所選屬性: 0

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

IPW60R037CSFD CoolMOS™ Superjunction MOSFET

Infineon Technologies IPW60R037CSFD CoolMOS™ Superjunction MOSFET is optimized to address the off-board EV-charging market segment. The device has a low gate charge (Qg) and improved switching behavior with high efficiency. The device features an integrated fast body diode that tremendously reduces reverse recovery charge (Qrr), leading to high reliability in resonant topologies. Infineon IPW60R037CSFD meets efficiency and reliability standards of off-board EV charging and supports high-power density solutions.