NXH008T120M3F2PTHG

onsemi
863-H008T120M3F2PTHG
NXH008T120M3F2PTHG

製造商:

說明:
MOSFET模組 8M 1200V 40A M3S SIC TNPC MODULE

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 28

庫存:
28 可立即送貨
工廠前置作業時間:
20 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$1,400.52 HK$1,400.52
HK$1,302.62 HK$13,026.20
100 報價

商品屬性 屬性值 選擇屬性
onsemi
產品類型: MOSFET模組
RoHS:  
SiC
Press Fit
PIM-29
1.2 kV
129 A
8.5 mOhms
- 10 V, + 22 V
1.8 V
- 40 C
+ 150 C
371 W
NXH008T120M3F2PTHG
Tray
品牌: onsemi
下降時間: 15 ns
產品類型: MOSFET Modules
上升時間: 20.6 ns
原廠包裝數量: 20
子類別: Discrete and Power Modules
公司名稱: EliteSiC
標準斷開延遲時間: 137 ns
標準開啟延遲時間: 41.5 ns
Vf - 順向電壓: 4.8 V
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所選屬性: 0

CNHTS:
8504409100
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

NXH008T120M3F2PTHG Silicone Carbide (SiC) Module

onsemi NXH008T120M3F2PTHG Silicone Carbide (SiC) Module is a T-type neutral point clamped converter (TNPC) module based on 1200V M3S Planer SiC MOSFETs.  NXH008T120M3F2PTHG is optimized for fast-switching applications. Planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. This module exhibits optimum performance when driven with a 20V gate drive but also works well with an 18V gate drive.

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.

儲能解決方案

安森美 (onsemi) 儲能解決方案可捕獲一次產生的能量,供日後使用。這包括將能量從難以儲存的形式轉換為更方便或更經濟的儲存形式。添加電池可以儲存額外的電力,以便在需要時使用。