TP65H050G4YS

Name: Renesas Electronics TP65H050G4YS
Brand: Renesas Electronics
SKU: 227-TP65H050G4YS
Price: 80.31 HKD
Availability: InStock

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Mouser 編號：

227-TP65H050G4YS

製造商編號：

TP65H050G4YS

製造商：

Renesas Electronics

說明：

氮化鎵場效應管 650V, 50mohm GaN FET in TO247-4L

規格書:

TP65H050G4YS 規格書

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庫存量: 601

庫存：: 601 可立即送貨

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工廠前置作業時間：: 26 週工廠預計生產時間數量大於所顯示的數量。

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最少： 1 多個： 1

單價:

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總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$80.31	HK$80.31
	HK$55.24	HK$552.40
	HK$36.74	HK$3,674.00
	HK$36.66	HK$43,992.00

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商品屬性	屬性值	選擇屬性
製造商:	Renesas Electronics
產品類型:	氮化鎵場效應管
RoHS:
安裝風格:	Through Hole
封裝/外殼:	TO-247-4
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	35 A
Rds On - 漏-源電阻:	60 mOhms
Vgs - 閘極-源極電壓:	- 20 V, + 20 V
Vgs th - 門源門限電壓 :	4.8 V
Qg - 閘極充電:	16 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	132 W
通道模式:	Enhancement
公司名稱:	SuperGaN
品牌:	Renesas Electronics
配置:	Cascode
下降時間:	8 ns
封裝:	Tube
產品類型:	GaN FETs
上升時間:	5 ns
系列:	Gen IV SuperGaN
原廠包裝數量:	1200
子類別:	Transistors
技術:	GaN
晶體管類型:	GaN HEMT
標準斷開延遲時間:	40 ns
標準開啟延遲時間:	40 ns

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規格書

TP65H050G4YS 規格書

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TP65H050G4YS 650V SuperGaN® FET

Renesas Electronics TP65H050G4YS 650V SuperGaN^® FET is a 50mΩ Gallium Nitride (GaN) normally-off device available in 4 Lead TO-247 package. This Gen IV SuperGaN FET uses Gen IV platform, which supports advanced epi and patented design technologies to simplify manufacturability. The TP65H050G4YS 650V FET combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET for superior reliability and performance. This SuperGaN FET improves efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Typical applications include datacom broad industrial, PV inverter, and servo motor.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.