RS6N120BHTB1

ROHM Semiconductor
755-RS6N120BHTB1
RS6N120BHTB1

製造商:

說明:
MOSFET Nch 80V 135A, HSOP8, Power MOSFET: RS6N120BH is a power MOSFET with low-on resistance and high power package, suitable for switching.

ECAD模型:
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庫存:
0

您仍可購買此商品作為延期交貨訂單。

在途量:
2,500
預期28/5/2026
工廠前置作業時間:
18
工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$30.00 HK$30.00
HK$19.56 HK$195.60
HK$15.29 HK$1,529.00
HK$12.82 HK$6,410.00
HK$11.18 HK$11,180.00
完整捲(訂購多個2500)
HK$11.18 HK$27,950.00

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
HSOP-8
N-Channel
1 Channel
80 V
135 A
3.3 mOhms
- 20 V, 20 V
4 V
53 nC
- 55 C
+ 150 C
104 W
Enhancement
Reel
Cut Tape
品牌: ROHM Semiconductor
配置: Single
下降時間: 35 ns
互導 - 最小值: 42 S
產品類型: MOSFETs
上升時間: 47 ns
原廠包裝數量: 2500
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 73 ns
標準開啟延遲時間: 32 ns
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

RS6/RH6 Cu-Clip Package N-Channel Power MOSFETs

ROHM Semiconductor RS6/RH6 Cu-Clip Package N-Channel Power MOSFETs enable high current handling capability with reduced package resistance. The HSOP-8 and HSMT-8 packaged components provide simultaneous low ON-resistance and gate charge capacitance, minimizing energy loss. Operating within a -55°C to +150°C temperature range, these MOSFETs are ideal for drive applications that operate on 24V/36V/48V power supplies.

RS6N120BH N-Channel Power MOSFET

ROHM Semiconductor RS6N120BH N-Channel Power MOSFET is a compact low-loss MOSFET featuring a Cu clip structure contributing to high-efficiency operation. The system increases current capacity while reducing package resistance. This feature makes the RS6N120BH ideal for drive applications that operate on 24V/36V/48V power supplies.