High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

結果: 71
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱
onsemi 碳化矽MOSFET 1200V/150MOSICFETG3TO263-7 412庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi 碳化矽MOSFET 1700V/400MOSICFETG3TO2 728庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 650V/80MOSICFETG3TO247 854庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 650V/80MOSICFETG3TO220 478庫存量
2,000預期20/4/2026
最少: 1
倍數: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1200V/40MOSICFETG3TO24 547庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1200V/150MOSICFETG3TO2 393庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 18.4 A 180 mOhms - 25 V, + 25 V 3.5 V 30 nC - 55 C + 175 C 166.7 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/18MOSICFETG4TO247 224庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/44MOSICFETG4TO247-4 1,527庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/11MOSICFETG4TO247-4 688庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi 碳化矽MOSFET 1200V/70MOSICFETG3TO24 590庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34.5 A 90 mOhms - 25 V, + 25 V 6 V 46 nC - 55 C + 175 C 254.2 W Enhancement SiC FET
onsemi 碳化矽MOSFET 650V/30MOSICFETG3TO263 751庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 66 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 250 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 650V/80MOSICFETG3TO247 683庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1200V/150MOSICFETG3TO2 77庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18.4 A 330 mOhms - 25 V, + 25 V 3.5 V 25.7 nC - 55 C + 175 C 166.7 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1200V/70MOSICFETG3TO24 118庫存量
1,800預期18/2/2026
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 34.5 A 90 mOhms - 12 V, + 12 V 6 V 46 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/6MOSICFETG4TO247-4 5庫存量
600預期7/8/2026
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 120 A 5.9 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 714 W Enhancement SiC FET
onsemi 碳化矽MOSFET 1200V/400MOSICFETG3TO247-3
300預期18/2/2026
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/60MOSICFETG4TO247-4
577預期9/2/2026
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 650V/30MOSICFETG3TO263-7 56,800工廠有庫存
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 27 mOhms - 25 V, + 25 V 6 V 43 nC - 55 C + 175 C 214 W Enhancement SiC FET
onsemi 碳化矽MOSFET 750V/9MOSICFETG4TO247-4 無庫存前置作業時間 31 週
最少: 600
倍數: 600

Through Hole TO-247-4 N-Channel 1 Channel 750 V 106 A 9 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 375 W Enhancement SiC FET
onsemi 碳化矽MOSFET 750V/10MOSICFETG4TOLL 無庫存前置作業時間 28 週
最少: 2,000
倍數: 2,000
: 2,000
SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 106 A 10.7 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 556 W Enhancement SiC FET
onsemi 碳化矽MOSFET UJ4SC075010L8S 暫無庫存

SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 106 A 10.7 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 556 W Enhancement SiC FET