CoolGaN™ 650V G5 Transistors

Infineon Technologies CoolGaN™ 650V G5 Transistors feature highly efficient gallium nitride (GaN) transistor technology for power conversion. The 650V G5 family addresses consumer, data center, industrial, and solar application challenges. The transistors offer improved system efficiency and power density with ultra-fast switching capability. The CoolGaN technology provides discrete and integrated solutions designed to enhance overall system performance. The Infineon Technologies CoolGaN 650V G5 Transistors enable high operating frequencies and reduce EMI ratings. The transistors are ideal for power distribution, switch-mode power supplies (SMPS), telecommunications, and other industrial applications.

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選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱
Infineon Technologies 氮化鎵場效應管 Two 140 mohm / 650 V GaN transistors in half-bridge configuration 2,392庫存量
最少: 1
倍數: 1
: 3,000

SMD/SMT QFN-32 N-Channel 2 Channel 650 V 170 mOhms 1.6 V 1.8 nC - 55 C + 150 C
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 2,022庫存量
最少: 1
倍數: 1
: 3,000

SMD/SMT HEMT 1 Channel 650 V 22 A 70 mOhms - 10 V 1.6 V 4.7 nC - 55 C + 150 C 111 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 2,304庫存量
最少: 1
倍數: 1
: 3,000

SMD/SMT HEMT 1 Channel 650 V 18 A 100 mOhms - 10 V 1.6 V 25 nC - 55 C + 150 C 81 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 2,388庫存量
最少: 1
倍數: 1
: 3,000

SMD/SMT HEMT 1 Channel 650 V 16 A 140 mOhms - 10 V 1.6 V 2.4 nC - 55 C + 150 C 59 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 2,263庫存量
最少: 1
倍數: 1
: 3,000

SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 47 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 2,535庫存量
最少: 1
倍數: 1
: 3,000

SMD/SMT PG-LSON-8 HEMT 1 Channel 650 V 20 A 70 mOhms - 10 V 1.2 V 4.7 nC - 55 C + 150 C 91 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 2,832庫存量
最少: 1
倍數: 1
: 3,000

SMD/SMT PG-LSON-8 HEMT 1 Channel 650 V 18 A 100 mOhms - 10 V 1.2 V 3.3 nC - 55 C + 150 C 68 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 2,696庫存量
最少: 1
倍數: 1
: 3,000

SMD/SMT PG-LSON-8 HEMT 1 Channel 650 V 20 A 140 mOhms - 10 V 1.2 V 2.4 nC - 55 C + 150 C 51 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 2,797庫存量
最少: 1
倍數: 1
: 3,000

SMD/SMT PG-LSON-8 HEMT 1 Channel 650 V 12 A 170 mOhms - 10 V 1.2 V 1.8 nC - 55 C + 150 C 42 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 1,499庫存量
2,000預期5/3/2026
最少: 1
倍數: 1
: 2,000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 70 A 30 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 236 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 2,000庫存量
2,000預期16/2/2026
最少: 1
倍數: 1
: 2,000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 49 A 42 mOhms - 10 V 1.6 V 7.7 nC - 55 C + 150 C 167 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 1,872庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 6 nC - 55 C + 150 C 131 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 1,503庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 31 A 66 mOhms - 10 V 1.6 V 4.7 nC - 55 C + 150 C 106 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 650 V G5 1,631庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 47 W Enhancement CoolGaN