SiHG47N60E E Series MOSFETs

Vishay Siliconix SiHG47N60E E Series 600V High-Voltage MOSFETs offer low figure-of-merit (FOM), low input capacitance, and reduced switching and conduction losses. These high-voltage MOSFETs also feature ultra-low gate charges and come in avalanche energy rating (UIS). The SiHG47N60E E Series facilitates compliance with Energy Star 80 Plus certification. These Vishay Siliconix SiHG47N60E high-voltage MOSFETs are available in a single configuration. Typical applications include Switch Mode Power Supplies (SMPS), Power Factor Correction (PFC) power supplies, High-intensity discharge (HID), fluorescent ballast lighting, welding, induction heating, and motor drives.

結果: 2
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 封裝

Vishay / Siliconix MOSFET 600V Vds 30V Vgs TO-247AC 2,785庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 47 A 64 mOhms - 30 V, 30 V 4 V 148 nC - 55 C + 150 C 357 W Enhancement Tube

Vishay / Siliconix MOSFET 600V Vds 30V Vgs TO-247AC 942庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 47 A 64 mOhms - 30 V, 30 V 4 V 148 nC - 55 C + 150 C 357 W Enhancement Tube