MRF300 RF Power LDMOS Transistors

NXP Semiconductors MRF300 RF Power LDMOS Transistors feature unmatched input and output, allowing wide frequency range operation from 1.8MHz to 250MHz. NXP MRF300 LDMOS transistors offer two opposite pin-connection versions (A and B) to be used in a push-pull and two-up configuration for wideband performance. These transistors are housed in an industry-standard TO-247 package, offering flexibility and ease of mounting. The rugged transistors are suitable for high VSWR industrial, scientific, and medical (ISM) applications and broadcast, mobile radio, HF/VHF communications, and switch-mode power supplies.

結果: 2
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 晶體管極性 技術 Id - C連續漏極電流 Vds - 漏-源擊穿電壓 操作頻率 增益 輸出功率 最低工作溫度 最高工作溫度 安裝風格 封裝/外殼 封裝
NXP Semiconductors RF MOSFET晶體管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V 370庫存量
最少: 1
倍數: 1

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors RF MOSFET晶體管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V 無庫存前置作業時間 10 週
最少: 240
倍數: 240

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube