MRF1K50N 1500W RF Power Transistors

NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections. 

結果: 2
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 晶體管極性 技術 Id - C連續漏極電流 Vds - 漏-源擊穿電壓 操作頻率 增益 輸出功率 最低工作溫度 最高工作溫度 安裝風格 封裝/外殼 封裝
NXP Semiconductors RF MOSFET晶體管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V 41庫存量
最少: 1
倍數: 1
: 50

N-Channel Si 36 A 133 V 1.8 MHz to 500 MHz 23 dB 1.5 kW - 40 C + 150 C SMD/SMT OM-1230-4 Reel, Cut Tape
NXP Semiconductors RF MOSFET晶體管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V 無庫存前置作業時間 10 週
最少: 50
倍數: 50
: 50

N-Channel Si 36 A 133 V 1.8 MHz to 500 MHz 23 dB 1.5 kW - 40 C + 150 C SMD/SMT OM-1230G-4 Reel