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DMT2004UFDF-7

Name: Diodes Incorporated DMT2004UFDF-7
Brand: Diodes Incorporated
SKU: 621-DMT2004UFDF-7
Price: 5.34 HKD
Availability: InStock

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請參閱產品規格

Mouser 編號：

621-DMT2004UFDF-7

製造商編號：

DMT2004UFDF-7

製造商：

Diodes Incorporated

說明：

MOSFET MOSFET BVDSS: 8V-24V

規格書:

DMT2004UFDF-7 規格書 (PDF)

ECAD模型:

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庫存量: 3,641

庫存：: 3,641 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 24 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

包裝:

完整捲（訂購多個3000）

帶狀裁切

MouseReel™ (+HK$55.00)

Pricing (HKD)

數量	單價	總價
零卷 / MouseReel™ ^†
	HK$5.34	HK$5.34
	HK$4.01	HK$40.10
	HK$2.75	HK$275.00
	HK$2.41	HK$1,205.00
	HK$2.18	HK$2,180.00
完整捲（訂購多個3000）
	HK$1.73	HK$5,190.00
	HK$1.67	HK$10,020.00
	HK$1.50	HK$13,500.00

† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	Diodes Incorporated
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	DFN-2020-6
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	24 V
Id - C連續漏極電流:	14.1 A
Rds On - 漏-源電阻:	4.8 mOhms
Vgs - 閘極-源極電壓:	- 12 V, 12 V
Vgs th - 門源門限電壓 :	550 mV
Qg - 閘極充電:	53.7 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	12.5 W
通道模式:	Enhancement
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	Diodes Incorporated
配置:	Single
下降時間:	38.6 ns
產品類型:	MOSFETs
上升時間:	9.6 ns
原廠包裝數量:	3000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	30.8 ns
標準開啟延遲時間:	3.9 ns
每件重量:	6.750 mg

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所選屬性: 0

篩選文檔:

規格書

DMT2004UFDF-7 規格書 (PDF)

PCN

Environmental Compliance (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

DMT2004UF N-Channel Enhancement Mode MOSFETs

Diodes Incorporated DMT2004UF MOSFET is a 24V N-Channel Enhancement-Mode MOSFET designed with a 0.6mm profile and 4mm² footprint. Qualified to AEC-Q101 Standards for High Reliability, the DMT2004UF MOSFET minimizes on-state resistance while maintaining excellent switching performance. The DMT2004UF MOSFET offers a 4.8-12.5mΩ on-state resistance, 0.55-1.45V gate threshold voltage, 11.2-14.1A continuous drain current, and 12.5W power dissipation. Switching performance includes a 38.6ns turn-off fall time, 9.6ns turn-on rise time, typical 30.8ns turn-off delay time, typical 3.9ns turn-on delay time, and 11.2ns recovery time. The 24V DMT2004UF N-Channel Enhancement-Mode MOSFET design makes the device ideal for high-efficiency power-management applications.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Gate Drivers

Diodes Incorporated Gate Drivers cover many applications in power systems and motor drives. These gate drivers act as the interface between the microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.

DMTx MOSFETs

Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.