IXSJxN120R1K 1200V SiC Power MOSFETs

IXYS IXSJxN120R1K 1200V SiC Power MOSFETs feature up to 1200V blocking voltage with 18mΩ or 36mΩ low R_DS(on). These IXYS SiC power MOSFETs offer a low gate charge of 79nC (IXSJ43N120R1K) or 155nC (IXS80N120R1K) and a low input capacitance of 2453pF (IXSJ43N120R1K) or 4556pF (IXSJ80N120R1K). The IXSJxN120R1K provides a 15V to 18V flexible gate voltage range and a recommended turn-off gate voltage of 0V. Applications include electric vehicle (EV) charging infrastructures, solar inverters, switch-mode power supplies, uninterruptible power supplies, motor drives, and more.