DRV8770RGER

Texas Instruments
595-DRV8770RGER
DRV8770RGER

製造商：

說明：
電機/運動/點火控制器及驅動器 100V H-bridge gate d river 24-VQFN -40 t

規格書:
ECAD模型:
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庫存量: 3,232

庫存：
3,232 可立即送貨
工廠前置作業時間：
6 週 工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個3000）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$23.92 HK$23.92
HK$17.84 HK$178.40
HK$16.36 HK$409.00
HK$14.71 HK$1,471.00
HK$13.89 HK$3,472.50
HK$13.65 HK$6,825.00
HK$12.99 HK$12,990.00
完整捲（訂購多個3000）
HK$12.82 HK$38,460.00
HK$11.84 HK$71,040.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
Texas Instruments
產品類型: 電機/運動/點火控制器及驅動器
RoHS:  
Brushed DC Motor Drivers
Half Bridge
1.5 A
750 mA
- 40 C
+ 125 C
SMD/SMT
VQFN-24
Reel
Cut Tape
MouseReel
品牌: Texas Instruments
輸出數: 1 Output
操作頻率: 0 Hz to 200 kHz
產品類型: Motor / Motion / Ignition Controllers & Drivers
系列: DRV8770
原廠包裝數量: 3000
子類別: PMIC - Power Management ICs
電源電壓 - 最大值: 20 V
電源電壓 - 最小值: 5 V
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所選屬性: 0

規格書

PCN

此功能需要啟用JavaScript。

合規守則
CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99
原產地分類
原產國:
中國
封裝原產國:
無資料
擴散國:
無資料
出貨時，國家可能會有所變更。

DRV8x Integrated Motor Drivers

Texas Instruments DRV8x motor drivers are intended to drive an electromagnetic machine, such as a brushed or brushless motor, stepper motor, or other electromechanical actuator. The TI DRV8x family of integrated motor drivers enable designers to quickly and easily spin their motors, reducing time to market and greatly simplifying design. By integrating the gate drive circuitry, sense amps, protection, FETS, industry standard control interfaces, and drive algorithms, the design complexity, board space, and time to spin a motor have all be greatly reduced. With on-chip protection including overcurrent, thermal, shoot-through, and undervoltage, the DRV8x family is robust, reliable, and fully protected.

DRV8770 100V Brushed DC Gate Driver

Texas Instruments DRV8770 100V Brushed DC Gate Driver delivers two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750mA source and 1.5A sink. The high voltage tolerance of the gate drive pins improves system robustness.

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