Red Enhanced Silicon Photodiodes

Advanced Photonix Red Enhanced Silicon Photodiodes offer a variety of features and packages for numerous applications. The SD113-24-21-021 is a red enhanced Bi-Cell silicon photodiode with a gap of 100µm. It is ideal for accurate nulling, centering, or measuring small positional changes packaged in a hermetic TO-5 metal package. The SD 197-23-21-041 is a red enhanced quad-cell silicon photodiode used for nulling, centering, or measuring small positional changes packaged in a hermetic TO-8 metal package.

結果: 6
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 產品 封裝/外殼 安裝風格 峰值波長 暗電流 Vr - 反向電壓 上升時間 下降時間 最低工作溫度 最高工作溫度
Advanced Photonix 光二極管 Red Enhanced Ceramic Package Assembly 48庫存量
最少: 1
倍數: 1

PIN Photodiodes Through Hole 1100 nm 6 nA 75 V 190 ns 45 ns - 40 C + 125 C
Advanced Photonix 光二極管 Blue Enhanced Photodiode 1,420庫存量
最少: 1
倍數: 1
: 1,500

PIN Photodiodes SMD/SMT 1100 nm 2 nA 32 V 20 ns 20 ns - 40 C + 100 C
Advanced Photonix 光二極管 Red Enhanced Photodiode 36庫存量
最少: 1
倍數: 1

PIN Photodiodes Wire 660 nm 1 nA 50 V 45 ns 45 ns - 40 C + 100 C
Advanced Photonix 光二極管 Bi-Cell Red Enhanced Photodiode Assembly
379在途量
最少: 1
倍數: 1

PIN Photodiodes TO-5 Through Hole 900 nm 500 pA 50 V 50 ns 15 ns - 40 C + 125 C
Advanced Photonix 光二極管 Red Enhanced Photodiode
160預期21/4/2026
最少: 1
倍數: 1

Photodiodes TO-8 Through Hole 1100 nm 1.4 nA 50 V 190 ns 13 ns - 40 C + 125 C
Advanced Photonix 光二極管 Red Enhanced Photodiode
100預期23/2/2026
最少: 1
倍數: 1

PIN Photodiodes Wire 1100 nm 90 nA 50 V - 40 C + 100 C