Model BID Insulated Gate Bipolar Transistors

Bourns Model BID Insulated Gate Bipolar Transistors (IGBTs) combine technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage and fewer switching losses. The IGBTs feature a -55°C to +150°C operating temperature range and are available in TO-252, TO-247, and TO-247N packages. These thermally efficient components provide a lower thermal resistance making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.

結果: 8
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說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
封裝/外殼
安裝風格
配置
集電極-發射極最大電壓VCEO
集電極-發射極飽和電壓
柵極發射機最大電壓
連續集電極電流在25 C
Pd - 功率消耗
最低工作溫度
最高工作溫度
系列
封裝
Bourns IGBT IGBT Discrete 600V, 5A in TO-252
規格書
24,136庫存量
帶狀裁切
HK$18.33
HK$11.75
HK$7.93
HK$6.32
HK$5.80
捲
HK$5.29
可選用MouseReel
最少： 1
倍數： 1
: 2,500
Si TO-252-3 SMD/SMT Single 600 V 1.5 V - 30 V, 30 V 10 A 82 W - 55 C + 150 C BID Reel, Cut Tape, MouseReel
Bourns IGBT IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
規格書
5,797庫存量
HK$66.99
HK$38.80
HK$32.55
HK$30.58
最少： 1
倍數： 1
Si TO-247-3 Through Hole Single 650 V 1.65 V 20 V 150 A 394 W - 40 C + 175 C BID Tube
Bourns IGBT IGBT Discrete 650V, 40A, Medium speed switching in TO-247-3L
規格書
2,780庫存量
HK$50.80
HK$28.77
HK$23.92
HK$22.85
檢視
最少： 1
倍數： 1
Si TO-247-3 Through Hole Single 650 V 1.35 V 20 V 80 A 230 W - 40 C + 175 C BID Tube
Bourns IGBT IGBT Discrete 650V, 40A, High speed switching in TO-247-3L
規格書
2,967庫存量
HK$48.66
HK$28.77
HK$23.92
HK$22.77
HK$21.45
最少： 1
倍數： 1
Si TO-247-3 Through Hole Single 650 V 1.65 V 20 V 80 A 300 W - 40 C + 175 C BID Tube
Bourns IGBT IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
規格書
2,773庫存量
HK$61.90
HK$38.80
HK$32.55
HK$30.58
最少： 1
倍數： 1
Si TO-247-3 Through Hole Single 650 V 1.42 V 20 V 150 A 394 W - 40 C + 175 C BID Tube
Bourns IGBT IGBT Discrete 600V, 30A in TO-247
規格書
3,011庫存量
HK$45.21
HK$27.04
HK$21.62
HK$18.99
HK$18.50
最少： 1
倍數： 1
Si TO-247-3 Through Hole Single 600 V 1.65 V - 20 V, 20 V 60 A 230 W - 55 C + 150 C BID Tube
Bourns IGBT IGBT Discrete 650V, 50A in TO-247
規格書
2,979庫存量
1,230預期8/1/2027
HK$56.80
HK$33.21
HK$27.70
HK$23.84
最少： 1
倍數： 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 100 A 416 W - 55 C + 150 C BID Tube
Bourns IGBT IGBT Discrete 600V, 30A in TO-247N
規格書
無庫存前置作業時間 16 週
HK$46.44
HK$28.28
HK$22.69
HK$16.52
最少： 1
倍數： 1
Si TO-247N-3 Through Hole Single 600 V 1.65 V - 20 V, 20 V 60 A 230 W - 55 C + 150 C BID Tube