GP2T080A120U

SemiQ
148-GP2T080A120U
GP2T080A120U

製造商:

說明:
碳化矽MOSFET

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 99

庫存:
99 可立即送貨
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$59.27 HK$59.27
HK$34.20 HK$342.00
HK$28.61 HK$3,433.20
HK$24.50 HK$12,495.00

商品屬性 屬性值 選擇屬性
SemiQ
產品類型: 碳化矽MOSFET
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
80 mOhms
- 5 V, + 20 V
2.8 V
58 nC
- 55 C
+ 175 C
188 W
Enhancement
品牌: SemiQ
配置: Single
下降時間: 10 ns
封裝: Tube
產品類型: SiC MOSFETS
上升時間: 6 ns
系列: GP2T080A120U
原廠包裝數量: 30
子類別: Transistors
技術: SiC
標準斷開延遲時間: 16 ns
標準開啟延遲時間: 10 ns
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所選屬性: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

GP2T080A120U 1200V SiC N-Channel MOSFET

SemiQ GP2T080A120U 1200V SiC N-Channel MOSFET offers low capacitance and high system efficiency. This MOSFET features high-speed switching, increased power density, reduced heat-sink size, and a reliable body diode. The GP2T080A120U 1200V SiC N-Channel MOSFET parts are tested to above 1400V and avalanche tested to 200mJ. This MOSFET can be used in the applications such as solar inverters, EV charging stations, induction heating and welding, and motor drivers.