UF4SC120023B7S

UF4SC120023B7S G4 Silicone Carbide (SiC) FETs

onsemi UF4SC120023B7S G4 Silicone Carbide (SiC) FETs are 1200V, 23mΩ devices based on a unique cascode circuit configuration. A normally-on SiC JFET is co-packaged in this configuration with a Si MOSFET, producing a normally-off SiC FET device. The device’s standard gate-drive characteristics allow the use of off-the-shelf gate drivers, thus requiring minimal re-design when replacing Si IGBTs, Si super junction devices, or SiC MOSFETs. Available in a space-saving D2PAK-7L package (enabling automated assembly), these devices exhibit an ultra-low gate charge and exceptional reverse recovery characteristics. onsemi UF4SC120023B7S G4 SiC FETs are ideal for switching inductive loads and applications requiring a standard gate drive.