FFSP0865B

onsemi
863-FFSP0865B
FFSP0865B

製造商:

說明:
碳化矽肖特基二極管 SIC DIODE TO220 650V

ECAD模型:
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庫存量: 1,334

庫存:
1,334 可立即送貨
工廠前置作業時間:
13 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$24.74 HK$24.74
HK$13.81 HK$138.10
HK$12.58 HK$1,258.00
HK$11.75 HK$5,875.00
HK$11.26 HK$11,260.00
HK$10.77 HK$26,925.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽肖特基二極管
RoHS:  
Through Hole
TO-220-2
Single
8 A
650 V
1.39 V
56 A
40 uA
- 55 C
+ 175 C
FFSP0865B
Tube
品牌: onsemi
Pd - 功率消耗 : 73 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 50
子類別: Diodes & Rectifiers
公司名稱: EliteSiC
Vr - 反向電壓: 650 V
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所選屬性: 0

CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99

FFSP0865B 650V 8A SiC Schottky Diodes

onsemi FFSP0865B 650V, 8A Silicon Carbide Schottky Diodes use a technology that provides superior switching performance and higher reliability. onsemi FFSP0865B SiC Diodes feature temperature-independent switching characteristics, no reverse recovery current, and excellent thermal performance. Additional benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. The FFSP0865B 650V and 8A SiC Schottky Diodes come in a TO-220-2LD package.

650V SiC肖特基二極體

安森美 (onsemi) 650 V SiC肖特基二極體為基於矽的裝置提供卓越的開關性能及更高的可靠性。這些SiC肖特基二極體無反向恢復電流,具有溫度獨立開關及卓越的熱性能。該系統的優勢包括:提高效率、快速工作頻率、提高功率密度、降低EMI以及減小系統尺寸和成本。

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.