FGHL50T65MQDTx Field Stop Trench IGBTs

onsemi FGHL50T65MQDTx Field Stop Trench IGBTs are 4th generation mid-speed IGBTs technology co-packed with a fully rated current diode. These IGBTs operate at 175°C maximum junction temperature. Features include high current capability, smooth and optimized switching, and tight parameter distribution. Typical applications include solar inverters, UPS, ESS, converters, and FPS.

結果: 2
選擇 圖像 零件編號
 製造商
說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
封裝/外殼
安裝風格
配置
集電極-發射極最大電壓VCEO
集電極-發射極飽和電壓
柵極發射機最大電壓
連續集電極電流在25 C
Pd - 功率消耗
最低工作溫度
最高工作溫度
系列
封裝

onsemi IGBT IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode
規格書
1,874庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 650 V 1.45 V - 20 V, 20 V 80 A 268 W - 55 C + 175 C FGHL50T65MQDT Tube

onsemi IGBT IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode
規格書
321庫存量
最少： 1
倍數： 1

Si TO-247-4 Through Hole Single 650 V 1.45 V - 20 V, 20 V 80 A 268 W - 55 C + 175 C FGHL50T65MQDTL4 Tube