STD25NF20

STMicroelectronics
511-STD25NF20
STD25NF20

製造商:

說明:
MOSFET N-Ch 200V 0.10Ohm 18 A StripFET FET

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 13,806

庫存:
13,806 可立即送貨
工廠前置作業時間:
13 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲(訂購多個2500)

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™
HK$16.03 HK$16.03
HK$10.19 HK$101.90
HK$6.89 HK$689.00
HK$5.47 HK$2,735.00
HK$5.01 HK$5,010.00
完整捲(訂購多個2500)
HK$4.61 HK$11,525.00
HK$4.48 HK$22,400.00
HK$4.47 HK$44,700.00
25,000 報價
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
200 V
18 A
125 mOhms
- 20 V, 20 V
2 V
28 nC
- 55 C
+ 175 C
110 W
Enhancement
AEC-Q101
STripFET
Reel
Cut Tape
MouseReel
品牌: STMicroelectronics
配置: Single
下降時間: 10 ns
產品類型: MOSFETs
上升時間: 30 ns
系列: STD25NF20
原廠包裝數量: 2500
子類別: Transistors
晶體管類型: 1 N-Channel Power MOSFET
標準斷開延遲時間: 40 ns
標準開啟延遲時間: 15 ns
每件重量: 330 mg
找到產品:
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至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET I™ Power MOSFETs

STMicroelectronics STripFET I™ Power MOSFETs are enhancement mode Power MOSFETs that benefit from the "single feature size" strip-based process. This decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics, and low gate charge. This makes these devices ideal for switching automotive applications.