NVMJD010N10MCLTWG

onsemi
863-VMJD010N10MCLTWG
NVMJD010N10MCLTWG

製造商:

說明:
MOSFET PTNG 100V N-CH LL IN LFPA

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 2,297

庫存:
2,297 可立即送貨
工廠前置作業時間:
18 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$27.70 HK$27.70
HK$20.47 HK$204.70
HK$14.22 HK$1,422.00
HK$12.08 HK$6,040.00
完整捲(訂購多個3000)
HK$8.19 HK$24,570.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
LFPAK-8
N-Channel
2 Channel
100 V
62 A
10 mOhms
- 20 V, 20 V
3 V
26.4 nC
- 55 C
+ 175 C
84 W
Enhancement
Reel
Cut Tape
品牌: onsemi
配置: Dual
下降時間: 28 ns
互導 - 最小值: 61 S
產品類型: MOSFETs
上升時間: 32 ns
系列: NVMJD010N10MCL
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 68 ns
標準開啟延遲時間: 8 ns
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所選屬性: 0

USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

NVMJD010N10MCL Power MOSFET

onsemi NVMJD010N10MCL Power MOSFET is a dual, N-Channel MOSFET designed for compact and efficient designs, including high thermal performance. This power MOSFET operates at 100V drain-to-source voltage, 10mΩ drain resistance, and 62A continuous drain current. The NVMJD010N10MCL MOSFET features low total gate charge (QG) and capacitance to minimize driver losses. This MOSFET comes in a 5mm x 6mm flat lead package and is an AEC-Q101-qualified MOSFET. The device is Pb-free, halogen-free/BFR-free, Beryllium-free, and RoHS-compliant. This power MOSFET is ideal for solenoid drivers low side/high side drivers, automotive engine controllers, and antilock braking systems.