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FF900R12ME7B11NPSA1

Name: Infineon FF900R12ME7B11NPSA1
Brand: Infineon Technologies
SKU: 726-FF900R12ME7B11N1
Price: 2070.45 HKD
Availability: OutOfStock

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Mouser 編號：

726-FF900R12ME7B11N1

製造商編號：

FF900R12ME7B11NPSA1

製造商：

Infineon Technologies

說明：

IGBT 模組 1200 V, 900 A dual IGBT module

規格書:

FF900R12ME7B11NPSA1 規格書 (PDF)

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在途量:: 20

預期28/4/2026
工廠前置作業時間：: 14

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

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Pricing (HKD)

數量	單價	總價
	HK$2,070.45	HK$2,070.45
	HK$1,764.67	HK$17,646.70
100	報價

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商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	IGBT 模組
RoHS:	N
產品:	IGBT Silicon Modules
配置:	Dual
集電極-發射極最大電壓VCEO:	1.2 kV
集電極-發射極飽和電壓:	1.5 V
連續集電極電流在25 C:	900 A
柵射極漏電電流:	100 nA
最低工作溫度:	- 40 C
最高工作溫度:	+ 175 C
封裝:	Tray
品牌:	Infineon Technologies
產品類型:	IGBT Modules
原廠包裝數量:	10
子類別:	IGBTs
技術:	Si
公司名稱:	EconoDUAL
零件號別名:	FF900R12ME7_B11 SP005422550

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篩選文檔:

規格書

FF900R12ME7B11NPSA1 規格書 (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8504409100
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

FF900R12ME7_B11雙路IGBT模組

Infineon Technologies FF900R12ME7_B11雙路IGBT模組採用EconoDUAL™ 3、雙路TRENCHSTOP™ IGBT7模組、NTC及PressFIT觸點技術。此IGBT模組採用高功率密度、改善的終端和整合式NTC溫度感應器。FF900R12ME7_B11模組具有簡單和可靠的組裝，避免並行IGBT模組。此IGBT模組可儲存於-40℃至125℃溫度範圍。FF900R12ME7_B11模組包括用於1500V PV應用的優化爬電距離，以及pressFIT控制引腳和螺釘功率終端。此IGBT模組理想適用於電機控制裝置、太陽能系統解決方案、伺服驅動和UPS系統。

Industrial Drives

Infineon Industrial Drives offer a broad portfolio of efficient semiconductors optimized for motor drives. The designer can rely on Infineon intelligent power modules (IPMs) and discretes for smart designs in the low-power range. For medium-power drives, the Infineon EasyPIM™, EasyPACK™, and EconoPIM™ modules are the perfect match. Moving on to the high-power spectrum, EconoDUAL™ and PrimePACK™ are the solutions of choice. These are combined with the innovative .XT interconnection technology. PrimePACK modules can help designers overcome the overrating dilemma by extending the lifetime by raising thermal and power cycling capabilities.

IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules

Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules are based on micro-pattern trench technology that reduces losses and offers high controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to square trench cells. A specially optimized chip for industrial drive applications and solar energy systems provides low static losses, high power density, and soft switching. With a +175°C maximum operating temperature, the modules allow a significant increase in power density.

EconoDUAL™ 3 IGBT Modules

Infineon Technologies EconoDUAL™ 3 IGBT Modules are a solution for many applications requiring reliable, cost-effective power electronics. The Infineon Technologies EconoDUAL 3 can support currents ranging from 100A to 900A at various voltages, including 600V, 650V, 1200V, and 1700V. The device is equipped with state-of-the-art IGBT7 or IGBT4 technologies. The modules offer exceptional power density and cycling capability, and the symmetrical design allows for optimized current sharing between IGBT half bridges. This feature makes them ideal for parallel operation. EconoDUAL 3 is a versatile and efficient option for electric vehicles, renewable energy, or general-purpose drives.