RF4G100BGTCR

ROHM Semiconductor
755-RF4G100BGTCR
RF4G100BGTCR

製造商:

說明:
MOSFET DFN2020 N-CH 40V 10A

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 8,342

庫存:
8,342 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$11.26 HK$11.26
HK$7.10 HK$71.00
HK$4.70 HK$470.00
HK$3.67 HK$1,835.00
HK$3.34 HK$3,340.00
完整捲(訂購多個3000)
HK$2.92 HK$8,760.00
HK$2.70 HK$16,200.00
HK$2.56 HK$23,040.00

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
DFN-2020-8
N-Channel
1 Channel
40 V
10 A
14.2 mOhms
- 20 V, 20 V
2.5 V
10.6 nC
- 55 C
+ 150 C
2 W
Enhancement
Reel
Cut Tape
品牌: ROHM Semiconductor
配置: Single
下降時間: 4.5 ns
互導 - 最小值: 5.2 S
產品類型: MOSFETs
上升時間: 6.5 ns
原廠包裝數量: 3000
子類別: Transistors
標準斷開延遲時間: 21 ns
標準開啟延遲時間: 8.5 ns
零件號別名: RF4G100BG
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所選屬性: 0

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CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

RF4G100BG N-Channel Power MOSFET

ROHM Semiconductor RF4G100BG N-Channel Power MOSFET is a 40V, 10A MOSFET featuring a low 14.2mΩ on-resistance, making it ideal for switching applications. The RF4G100BG has a 27ns (typical) reverse recovery time and an 18nC (typical) reverse recovery charge. Power dissipation for the device is 2.0W, and it features a wide -55℃ to +150℃ operating junction and storage temperature range.

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