TRSxxN65FB 650V SiC Schottky Barrier Diodes

Toshiba TRSxxN65FB 650V SiC Schottky Barrier Diodes (SBDs) are the 2nd generation Silicon Carbide (SiC) SBDs with the improved Junction Barrier-controlled Schottky-structure (JBS) chip design. These devices feature high surge current capabilities and low-loss characteristics with non-repetitive peak forward surge current ratings. The Toshiba TRSxxN65FB diodes use the TO-247 package and offer four (12A, 16A, 20A, and 24A) forward DC ratings (both legs) supporting increased equipment power. The thin wafer technology ensures low forward voltages and low switching losses. Typical applications include Power-Factor Correction (PFC), solar inverters, servers, Uninterruptible Power Supplies (UPS), communication equipment, multi-function printers, DC-DC converters, and electric vehicle power supply facilities.