似乎你已停用瀏覽器的JavaScript。除非你登入，否則此頁面上的某些功能將無法使用。

BGAV1A10E6327XTSA1

Name: Infineon BGAV1A10E6327XTSA1
Brand: Infineon Technologies
SKU: 726-BGAV1A10E6327XTS
Price: 3.24 HKD
Availability: Discontinued

影像僅供參考
請參閱產品規格

Mouser 編號：

726-BGAV1A10E6327XTS

製造商編號：

BGAV1A10E6327XTSA1

製造商：

Infineon Technologies

說明：

RF放大器 RF SILICON MMIC

壽命週期:

NRND:

不建議用於新設計。

規格書:

BGAV1A10E6327XTSA1 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於Infineon Technologies BGAV1A10E6327XTSA1的資訊

供貨情況

庫存：: 暫無庫存

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 請聯系洽詢價格和交期

輸入數量：

最少： 4500 多個： 4500

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

此產品免費航運

Pricing (HKD)

數量	單價	總價
完整捲（訂購多個4500）
	HK$3.24	HK$14,580.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	RF放大器
RoHS:
操作頻率:	3.4 GHz to 3.8 GHz
工作電源電壓:	1.7 V to 1.9 V
運作供電電流:	5 mA
增益:	22 dB
NF - 雜訊圖標:	1.3 dB
類型:	Low Noise Amplifiers
安裝風格:	SMD/SMT
封裝/外殼:	ATSLP-10-3
技術:	Si
P1dB - 壓縮點:	3 dBm
OIP3 - 三階交調:	32 dBm
最低工作溫度:	- 30 C
最高工作溫度:	+ 85 C
封裝:	Reel
品牌:	Infineon Technologies
組裝國家:	Not Available
擴散國:	Not Available
原產國:	MY
輸入返回損耗:	13 dB
隔離分貝:	32 dB
通道數:	1 Channel
Pd - 功率消耗 :	90 mW
產品類型:	RF Amplifier
原廠包裝數量:	4500
子類別:	Wireless & RF Integrated Circuits
試驗頻率:	3.5 GHz
零件號別名:	BGA V1A10 E6327 SP001628074
每件重量:	2.450 mg

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

BGAV1A10E6327XTSA1 規格書 (PDF)

Product Catalogs

此功能需要啟用JavaScript。

CNHTS:: 8542339000
CAHTS:: 8537109920
USHTS:: 8542330001
TARIC:: 8537109899
ECCN:: EAR99

BGAx1A10 LTE LNA with Gain Control

Infineon Technologies BGAx1A10 LTE Low Noise Amplifiers (LNA) with Gain Control are designed to significantly improve the data rate of LTE communications. These BGAx1A10 LNAs feature an integrated gain control, bypass function, high system flexibility, and a low noise figure. The bypass mode reduces current consumption, and the Mobile Industry Processor Interface (MIPI) control interface reduces the control lines to a minimum. The BGAx1A10 LNAs ensures high LTE data rates due to high gain feature and higher system flexibility due to integrated gain control.

Low Noise Amplifier (LNA) ICs

Infineon Technologies Low Noise Amplifier (LNA) ICs boost data rates and reception quality of wireless applications by utilizing a very low-power signal without significant signal-to-noise ratio degradation. The improved receiver sensitivity enhances user experiences and satisfies market requirements. These highly integrated, small-packaged devices come with ESD protection and low power consumption, which is ideal for battery-operated mobile devices. Users of 4G/5G, GPS, Mobile TV, Wi-Fi, and FM portable devices will enjoy high data-rate reception, fast/precise navigation, and smooth, high-quality streaming even in the worst reception conditions.