STMicroelectronics EVSTDRIVEG600DM Demonstration Board provides a Half-Bridge topology reference design pairing the STDRIVEG600 Gate Driver with an MDmesh™ DM2 Power MOSFET. The STDRIVEG600 is a single-chip half-bridge gate driver for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V.