NVMFWS0D4N04XM Single N-Channel Power MOSFETs

onsemi NVMFWS0D4N04XM Single N-Channel Power MOSFETs are available in a 5mm x 6mm SO8-FL package with a compact design. These MOSFETs feature 40V drain-to-source voltage, ±20V gate-to-source voltage, and 197W power dissipation (TC=25°C). The NVMFWS0D4N04XM power MOSFETs offer low resistance (RDS(on)) to minimize conduction losses and low capacitance to minimize driver losses. These MOSFETs are AEC-Q101 qualified and PPAP capable. The NVMFWS0D4N04XM power MOSFETs are Pb, halogen and BFR free, and are RoHS compliant. Typical applications include motor drive, battery protection, reverse battery protection, synchronous rectification, switching power supplies, and power switches.

結果: 2
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 封裝
onsemi MOSFET 40V T10M IN S08FL GEN 2 PACKAGE 3,765庫存量
最少: 1
倍數: 1
: 1,500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 509 A 0.42 mOhms - 20 V, 20 V 3 V 132 nC - 55 C + 175 C 197 W Enhancement Reel, Cut Tape
onsemi MOSFET 40V T10M IN S08FL GEN 2 PACKAGE
1,500預期20/7/2026
最少: 1
倍數: 1
: 1,500

Si SMD/SMT DFNW-5 N-Channel 1 Channel 40 V 509 A 420 mOhms 20 V 3.5 V 132 nC - 55 C + 175 C 197 W Enhancement Reel, Cut Tape