SiC (Silicon Carbide) Diodes & Rectifiers

IXYS SiC (Silicon Carbide) Diodes and Rectifiers provide extremely fast switching, high-frequency operation with zero recovery, and temperature-independent behavior. Coupled with the low inductance IXYS DE-Series RF package, these SiC Diodes and Rectifiers diodes can be utilized in any number of fast switching diode circuits or high-frequency converter applications.

結果: 6
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 配置 If - 順向電流 Vrrm - 重複反向電壓 Vf - 順向電壓 Ifsm - 順向浪湧電流 Ir - 反向電流 最低工作溫度 最高工作溫度 系列 封裝
IXYS Integrated Circuits 碳化矽肖特基二極管 10A 600V Triple Common Anode SiC Schottky Diode 暫無庫存
最少: 40
倍數: 40

SMD/SMT SMD-6 Triple Common Anode 10 A 600 V 1.6 V 25 A 10 uA - 55 C + 175 C SS150 Tube
IXYS Integrated Circuits 碳化矽肖特基二極管 10A 600V Triple Common Cathode SiC Schottky Diode 暫無庫存
最少: 40
倍數: 40

SMD/SMT SMD-6 Triple Common Cathode 10 A 600 V 1.6 V 25 A 10 uA - 55 C + 175 C SS150 Tube
IXYS Integrated Circuits 碳化矽肖特基二極管 10A 600V Triple SiC Schottky Diode 暫無庫存
最少: 40
倍數: 40

SMD/SMT SMD-6 Triple 10 A 600 V 1.6 V 25 A 10 uA - 55 C + 175 C SS150 Tube
IXYS Integrated Circuits 碳化矽肖特基二極管 5A 1200V Triple Common Anode SiC Schottky Diode 暫無庫存
最少: 30
倍數: 30

SMD/SMT SMD-6 Triple Common Anode 5 A 1.2 kV 1.6 V 12 A 50 uA - 55 C + 175 C SS27 Tube
IXYS Integrated Circuits 碳化矽肖特基二極管 5A 1200V Triple Common Cathode SiC Schottky Diode 暫無庫存
最少: 30
倍數: 30

SMD/SMT SMD-6 Triple Common Cathode 5 A 1.2 kV 1.6 V 12 A 50 uA - 55 C + 175 C SS27 Tube
IXYS Integrated Circuits 碳化矽肖特基二極管 5A 1200V Triple SiC Schottky Diode 暫無庫存
最少: 30
倍數: 30

SMD/SMT SMD-6 Triple 5 A 1.2 kV 1.6 V 12 A 50 uA - 55 C + 175 C SS27 Tube