8GB DDR4 SDRAM

ISSI 8GB DDR4 SDRAM are high-speed dynamic random-access memory devices with data transfer rates up to 3200Mbps. The 8GB DDR4 SDRAM is internally organized with eight banks. Two configurations are available: either two bank groups, each with four banks for x16, or four bank groups, each with four banks for x8. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture combines an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the ISSI DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and eight corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins.

結果: 2
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ISSI DRAM 8G, 1.2V, DDR4, 512Mx16, 2400MT/s at 17-17-17, 96 ball BGA (10mm x14mm) RoHS, IT
2,176在途量
最少: 1
倍數: 1
最大: 605
SDRAM - DDR4 8 Gbit 16 bit 1.2 GHz 512 M x 16 1.14 V 1.26 V - 40 C + 95 C
ISSI DRAM 8G, 1.2V, DDR4, 512Mx16, 2400MT/s at 17-17-17, 96 ball BGA (10mm x14mm) RoHS
272在途量
最少: 1
倍數: 1
最大: 28

SDRAM - DDR4 8 Gbit 16 bit 1.2 GHz 512 M x 16 1.14 V 1.26 V 0 C + 95 C