RQ3G120BKFRATCB

ROHM Semiconductor
755-RQ3G120BKFRATCB
RQ3G120BKFRATCB

製造商:

說明:
MOSFET HSMT8 N CHAN 40V

壽命週期:
新產品:
該製造商的新產品。
ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 2,240

庫存:
2,240 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$13.15 HK$13.15
HK$8.38 HK$83.80
HK$5.56 HK$556.00
HK$4.36 HK$2,180.00
HK$3.99 HK$3,990.00
完整捲(訂購多個3000)
HK$3.62 HK$10,860.00

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: MOSFET
Si
SMD/SMT
HSMT-8
N-Channel
1 Channel
40 V
12 A
17.4 mOhms
- 20 V, 20 V
2.5 V
8.5 nC
- 55 C
+ 150 C
40 W
Enhancement
AEC-Q101
Reel
Cut Tape
品牌: ROHM Semiconductor
配置: Single
下降時間: 5 ns
產品類型: MOSFETs
上升時間: 7 ns
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 16 ns
標準開啟延遲時間: 7 ns
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

此功能需要啟用JavaScript。

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

RQ3G120BKFRA 40V N-Channel Power MOSFET

ROHM Semiconductor RQ3G120BKFRA 40V N-Channel Power MOSFET is a 40V drain-source voltage (VDSS) and ±12A continuous drain current (ID) rated automotive-grade MOSFET that is AEC-Q101 qualified. The drain-source on-state resistance [RDS(ON)] is 17.4mΩ (max.) (VGS = 10V, ID = 12A) and comes in a 3.3mm x 3.3mm HSMT8AG package. The ROHM Semiconductor RQ3G120BKFRA MOSFET is ideal for ADAS, information, lighting, and body applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.