NVMFS5830NLWFT1G-UM

Name: onsemi NVMFS5830NLWFT1G-UM
Brand: onsemi
SKU: 863-FS5830NLWFT1G-UM
Price: 24.41 HKD
Availability: OutOfStock

影像僅供參考
請參閱產品規格

Mouser 編號：

863-FS5830NLWFT1G-UM

製造商編號：

NVMFS5830NLWFT1G-UM

製造商：

onsemi

說明：

MOSFET Power MOSFET 40V, 185A, 2.3 mOhm, Single N-Channel, SO8-FL, Logic Level.

壽命週期:

新產品:

該製造商的新產品。

規格書:

NVMFS5830NLWFT1G-UM 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於onsemi NVMFS5830NLWFT1G-UM的資訊

供貨情況

庫存：: 0

您仍可購買此商品作為延期交貨訂單。

發生意外錯誤了。請稍後再試。
在途量:: 1,500

預期10/4/2026
工廠前置作業時間：: 40

週工廠預計生產時間數量大於所顯示的數量。

此產品已報告長備貨期。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$24.41	HK$24.41
	HK$15.78	HK$157.80
	HK$11.67	HK$1,167.00
	HK$9.78	HK$4,890.00
	HK$8.38	HK$8,380.00
完整捲（訂購多個1500）
	HK$8.38	HK$12,570.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	DFN-5
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	40 V
Id - C連續漏極電流:	185 A
Rds On - 漏-源電阻:	2.3 mOhms
Vgs - 閘極-源極電壓:	20 V
Vgs th - 門源門限電壓 :	2.4 V
Qg - 閘極充電:	113 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	158 W
通道模式:	Enhancement
封裝:	Reel
封裝:	Cut Tape
品牌:	onsemi
配置:	Single
下降時間:	27 ns
互導 - 最小值:	38 S
產品類型:	MOSFETs
上升時間:	32 ns
系列:	NVMFS5830NL
原廠包裝數量:	1500
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	40 ns
標準開啟延遲時間:	22 ns

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

NVMFS5830NLWFT1G-UM 規格書 (PDF)

TARIC:: 8541290000
ECCN:: EAR99

NVMx & NVTx Power MOSFETs

onsemi NVMx and NVTx Power MOSFETs are AEC−Q101 Qualified and offer compact and efficient solutions for automotive applications. NVMx and NVTx Power MOSFETs offer Low R_DS(on) to minimize conduction losses and low Q_G and Capacitance to minimize driver losses. These onsemi single N-Channel MOSFETs are housed in a compact, SO-8FL, and WDFN8 packages and are Pb−Free, Halogen Free/BFR Free, and RoHS Compliant.

N-Channel 40V & 60V Automotive Power MOSFETs

onsemi NVMFSCx Automotive Power 40V and 60V MOSFETs are available in 5mm x 6mm dual-sided cooled packages ideal for compact and efficient designs. The single N-Channel devices feature 1.5mΩ and 0.9mΩ R_DS(on) drain-source on-resistance to minimize conductive losses. The MOSFETs includes a wettable flank option available for enhanced optical inspection. The devices are also AEC-Q101-qualified and PPAP-capable, making them suitable for automotive applications.

NVMFS5830NL Single N-Channel Power MOSFET

onsemi NVMFS5830NL Single N-Channel Power MOSFET is a high-efficiency power MOSFET designed for demanding power management applications. Utilizing advanced trench technology, the onsemi NVMFS5830NL delivers exceptionally low R_DS(on) performance (2.3mΩ at V_GS = 10V), making the MOSFET ideal for minimizing conduction losses in high-current systems. The 5mm x 6mm x 1mm, flat-lead SO-8FL package enhances thermal performance and board space efficiency, while the low gate charge and fast switching characteristics contribute to improved overall system efficiency. A wettable flank option is available for enhanced optical inspection. With the combination of high current capability, low switching losses, and a compact footprint, the NVMFS5830NL is well-suited for use in motor control applications and high-/low-side load switches.