NxT2023N065M3S EliteSiC MOSFETs
onsemi NxT2023N065M3S EliteSiC MOSFETs are high-performance 650V Silicon Carbide (SiC) MOSFETs with a typical RDS(on) of 23mΩ and excellent thermal and switching characteristics. These MOSFETs feature low effective output capacitance, high efficiency, fast switching, and ultra-low gate charge. The NxT2023N065M3S MOSFETs support continuous drain currents up to 72A and operate across a wide temperature range from -55°C to 175°C. These MOSFETs are RoHS-compliant, halide-free, and housed in a compact T2PAK-7L package. The NVT2023N065M3S EliteSiC MOSFET is AEC-Q101 qualified, making it ideal for automotive-grade applications such as on-board chargers and DC-DC converters in EV/HEV platforms. The NTT2023N065M3S EliteSiC MOSFET is suitable for SMPS, solar inverters, UPS, energy storage, and EV charging infrastructure.
