Qorvo QPD1028 and QPD1028L Evaluation Boards are demonstration and development platforms for the QPD1028 and QPD1028L 750W GaN on SiC Transistors. The QPD1028 and QPD1028L are discrete Gallium Nitride on Silicon Carbide HEMT (High-Electron-Mobility Transistors) operating from 1.2GHz to 1.4GHz. These devices provide 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. The QPD1028 and QPD1028L Transistors are internally pre-matched for optimal performance can support both continuous wave and pulsed operations.
