UCC5871QDWJRQ1

UCC5871-Q1 IGBT/SiC MOSFET Gate Driver

Texas Instruments UCC5871-Q1 IGBT/SiC MOSFET Gate Driver is an isolated, highly configurable single-channel gate driver targeted to drive high-power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft-turn-off or two-level turn-off during these faults. To further reduce the application size, the Texas Instruments UCC5871-Q1 integrates a 4A active Miller clamp during switching and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables the monitoring up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the system design. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.