UJ3N Normally-On JFET Transistors

onsemi UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (RDS(ON)), as low as 25mΩ, and low gate charge (QG), allowing for low conduction and reduced switching loss. The device's normally-on characteristics with low RDS(ON) at VGS = 0V are also ideal for current protection circuits without the need for active control. The UJ3N JFET transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes," giving all of the advantages of wide band-gap technology with very high operating voltages and easy gate drive.

結果: 5
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 配置 Vds - 漏-源擊穿電壓 Vgs - 閘極-源極擊穿電壓 Vgs=0 時的漏極-源極電流 Id - C連續漏極電流 Rds On - 漏-源電阻 Pd - 功率消耗 最低工作溫度 最高工作溫度 系列 資格 封裝
onsemi JFET 1200V/35MOSICJFETG3TO 563庫存量
最少: 1
倍數: 1

SiC Through Hole TO-247-3 N-Channel Single 1.2 kV 20 V 63 A 35 mOhms 429 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 650V/25MOSICJFETG3TO2 250庫存量
最少: 1
倍數: 1

SiC Through Hole TO-247-3 N-Channel Single 650 V 20 V 85 A 25 mOhms 441 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 650V/80MOSICJFETG3TO2 425庫存量
最少: 1
倍數: 1
最大: 20

SiC Through Hole TO-247-3 N-Channel Single 650 V 20 V 32 A 80 mOhms 190 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 1200V/65MOSICJFETG3TO 428庫存量
最少: 1
倍數: 1

SiC Through Hole TO-247-3 N-Channel Single 1.2 kV - 20 V to 3 V 5 uA 34 A 90 mOhms 254 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 1200V/70MOSICJFETG3TO 434庫存量
最少: 1
倍數: 1

SiC Through Hole TO-247-3 N-Channel Single 1.2 kV 20 V 33.5 A 70 mOhms 254 W - 55 C + 175 C UJ3N AEC-Q101 Tube