SCT4013DRC15

ROHM Semiconductor
755-SCT4013DRC15
SCT4013DRC15

製造商:

說明:
碳化矽MOSFET TO247 750V 105A N-CH SIC

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庫存:
0

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在途量:
450
預期11/11/2026
工廠前置作業時間:
27
工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$288.28 HK$288.28
HK$213.06 HK$2,130.60

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: 碳化矽MOSFET
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
750 V
105 A
16.9 mOhms
- 4 V, + 21 V
4.8 V
170 nC
+ 175 C
312 W
Enhancement
品牌: ROHM Semiconductor
配置: Single
下降時間: 17 ns
互導 - 最小值: 32 S
封裝: Tube
產品: MOSFET's
產品類型: SiC MOSFETS
上升時間: 32 ns
原廠包裝數量: 450
子類別: Transistors
技術: SiC
晶體管類型: 1 N-Channel
標準斷開延遲時間: 82 ns
標準開啟延遲時間: 17 ns
零件號別名: SCT4013DR
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所選屬性: 0

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合規守則
CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99
原產地分類
原產國:
美國
封裝原產國:
無資料
擴散國:
無資料
出貨時,國家可能會有所變更。

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4013DR N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4013DR N-Channel Silicon Carbide (SiC) Power MOSFET is a high-performance device designed for demanding power electronics applications. Featuring a drain-source voltage rating of 750V and a 105A continuous drain current (at +25°C), this device offers exceptional efficiency and thermal performance. The low on-resistance of 13mΩ (typical) and fast switching characteristics make the ROHM SCT4013DR ideal for high-frequency applications such as power supplies, inverters, and motor drives. The SCT4013DR also benefits from the inherent advantages of SiC technology, including a high breakdown voltage, low switching losses, and superior thermal conductivity, which contribute to reduced system size and improved reliability. Packaged in a TO-247-4L case, the MOSFET supports robust thermal management and ease of integration into existing designs.

750V N通道SiC MOSFET

ROHM Semiconductor 750V N通道SiC MOSFET可提升切換頻率,從而減少所需電容器、電感器及其他元件的體積。此類SiC MOSFET提供TO-247N、TOLL、TO-263-7L、TO-263-7LA及TO-247-4L封裝選項。該系列器件的靜態漏源導通電阻 [RDS(on)](典型值)介於13mΩ至65mΩ,連續漏極電流 (ID) 與源極電流 (IS)(TC=25°C)範圍為22A至120A。這些ROHM 750V SiC MOSFET憑藉SiC技術的獨特優勢,具備高耐壓、低導通電阻與高速切換特性。