MOSFET HIGH POWER_NEW
IPW95R060PFD7XKSA1
Infineon Technologies
1:
HK$127.99
944 庫存量
Mouser 元件編號
726-IPW95R060PFD7XKS
Infineon Technologies
MOSFET HIGH POWER_NEW
944 庫存量
1
HK$127.99
10
HK$97.49
100
HK$81.21
480
HK$72.34
1,200
HK$68.47
購買
最少: 1
倍數: 1
Si
Through Hole
TO-247-3
N-Channel
1 Channel
950 V
74.7 A
60 mOhms
- 30 V, 30 V
3.5 V
315 nC
- 55 C
+ 150 C
446 W
Enhancement
Tube
MOSFET HIGH POWER_NEW
IPB95R130PFD7ATMA1
Infineon Technologies
1:
HK$64.44
736 庫存量
1,000 預期15/7/2026
Mouser 元件編號
726-IPB95R130PFD7ATM
Infineon Technologies
MOSFET HIGH POWER_NEW
736 庫存量
1,000 預期15/7/2026
1
HK$64.44
10
HK$43.07
100
HK$34.69
500
HK$30.83
1,000
HK$27.54
購買
最少: 1
倍數: 1
捲 :
1,000
詳細資料
Si
SMD/SMT
TO-263-3
N-Channel
1 Channel
950 V
36.5 A
130 mOhms
- 20 V, 20 V
2.5 V
141 nC
- 55 C
+ 150 C
227 W
Enhancement
Reel, Cut Tape, MouseReel
MOSFET LOW POWER_NEW
IPB95R310PFD7ATMA1
Infineon Technologies
1:
HK$35.59
1,965 庫存量
Mouser 元件編號
726-IPB95R310PFD7ATM
Infineon Technologies
MOSFET LOW POWER_NEW
1,965 庫存量
1
HK$35.59
10
HK$23.34
100
HK$16.69
500
HK$13.81
1,000
HK$12.74
2,000
檢視
2,000
HK$11.67
5,000
HK$10.93
10,000
報價
購買
最少: 1
倍數: 1
捲 :
1,000
詳細資料
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
950 V
17.5 A
310 mOhms
- 30 V, 30 V
3.5 V
61 nC
- 55 C
+ 150 C
125 W
Enhancement
Reel, Cut Tape
MOSFET LOW POWER_NEW
IPB95R450PFD7ATMA1
Infineon Technologies
1:
HK$31.73
1,914 庫存量
Mouser 元件編號
726-IPB95R450PFD7ATM
Infineon Technologies
MOSFET LOW POWER_NEW
1,914 庫存量
1
HK$31.73
10
HK$20.71
100
HK$14.47
500
HK$12.00
1,000
HK$11.01
2,000
檢視
2,000
HK$10.11
5,000
HK$9.54
購買
最少: 1
倍數: 1
捲 :
1,000
詳細資料
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
950 V
13.3 A
450 mOhms
- 30 V, 30 V
3.5 V
43 nC
- 55 C
+ 150 C
104 W
Enhancement
Reel, Cut Tape
MOSFET HIGH POWER_NEW
IPA95R130PFD7XKSA1
Infineon Technologies
1:
HK$64.69
374 庫存量
Mouser 元件編號
726-IPA95R130PFD7XKS
Infineon Technologies
MOSFET HIGH POWER_NEW
374 庫存量
1
HK$64.69
10
HK$38.80
100
HK$33.29
500
HK$28.77
1,000
檢視
1,000
HK$24.58
2,500
HK$24.41
25,000
報價
購買
最少: 1
倍數: 1
Si
Through Hole
TO-220FP-3
N-Channel
1 Channel
950 V
13.9 A
130 mOhms
- 30 V, 30 V
3.5 V
141 nC
- 55 C
+ 150 C
33 W
Enhancement
Tube
MOSFET LOW POWER_NEW
IPA95R310PFD7XKSA1
Infineon Technologies
1:
HK$34.36
419 庫存量
Mouser 元件編號
726-IPA95R310PFD7XKS
Infineon Technologies
MOSFET LOW POWER_NEW
419 庫存量
1
HK$34.36
10
HK$22.52
100
HK$16.77
500
HK$13.97
1,000
檢視
1,000
HK$12.99
2,500
HK$12.33
購買
最少: 1
倍數: 1
Si
Through Hole
TO-220FP-3
N-Channel
1 Channel
950 V
8.7 A
310 mOhms
- 30 V, 30 V
3.5 V
61 nC
- 55 C
+ 155 C
31 W
Enhancement
Tube
MOSFET LOW POWER_NEW
IPD95R450PFD7ATMA1
Infineon Technologies
1:
HK$28.44
821 庫存量
Mouser 元件編號
726-IPD95R450PFD7ATM
Infineon Technologies
MOSFET LOW POWER_NEW
821 庫存量
1
HK$28.44
10
HK$18.41
100
HK$12.74
500
HK$10.36
2,500
HK$8.88
5,000
檢視
1,000
HK$9.54
5,000
HK$8.22
10,000
HK$8.17
25,000
報價
購買
最少: 1
倍數: 1
捲 :
2,500
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
950 V
13.3 A
450 mOhms
- 30 V, 30 V
3.5 V
43 nC
- 55 C
+ 150 C
104 W
Enhancement
Reel, Cut Tape
MOSFET HIGH POWER_NEW
IPW95R130PFD7XKSA1
Infineon Technologies
1:
HK$65.60
318 庫存量
Mouser 元件編號
726-IPW95R130PFD7XKS
Infineon Technologies
MOSFET HIGH POWER_NEW
318 庫存量
1
HK$65.60
10
HK$43.89
100
HK$35.26
480
HK$31.32
1,200
HK$28.03
購買
最少: 1
倍數: 1
詳細資料
Si
Through Hole
TO-247-3
N-Channel
1 Channel
950 V
36.5 A
130 mOhms
- 20 V, 20 V
2.5 V
141 nC
- 55 C
+ 150 C
227 W
Enhancement
Tube
MOSFET LOW POWER_NEW
IPA95R450PFD7XKSA1
Infineon Technologies
1:
HK$30.25
747 庫存量
Mouser 元件編號
726-IPA95R450PFD7XKS
Infineon Technologies
MOSFET LOW POWER_NEW
747 庫存量
1
HK$30.25
10
HK$16.93
100
HK$13.65
500
HK$10.36
1,000
檢視
1,000
HK$9.70
2,500
HK$9.29
5,000
HK$8.55
購買
最少: 1
倍數: 1
Si
Through Hole
TO-220FP-3
N-Channel
1 Channel
950 V
7.2 A
450 mOhms
- 30 V, 30 V
3.5 V
43 nC
- 55 C
+ 150 C
30 W
Enhancement
Tube
MOSFET LOW POWER_NEW
360°
+4 張圖片
IPW95R310PFD7XKSA1
Infineon Technologies
1:
HK$35.84
2,400 預期4/12/2026
Mouser 元件編號
726-IPW95R310PFD7XKS
Infineon Technologies
MOSFET LOW POWER_NEW
2,400 預期4/12/2026
1
HK$35.84
10
HK$21.62
100
HK$16.60
480
HK$13.81
1,200
檢視
1,200
HK$12.41
5,040
HK$11.18
購買
最少: 1
倍數: 1
詳細資料
Si
Through Hole
TO-247-3
N-Channel
1 Channel
950 V
17.5 A
310 mOhms
- 30 V, 30 V
3.5 V
61 nC
- 55 C
+ 150 C
125 W
Enhancement
Tube