onsemi UF3N 1700V-400mW SiC Normally On JFET exhibits ultra-low on-resistance (RDS(ON)) and gate charge (QG) that allows low conduction and switching loss. The low RDS(ON) value of this JFET at VGS = 0V is ideal for current protection circuits without the need for active control and for cascode operation. The UF3N offers a low gate charge and low intrinsic capacitance. This SiC FET from onsemi operates in a -55°C to +175°C temperature range and is available in a D2PAK-7L package that is RoHS compliant, halogen-free, and lead-free. Typical applications include overcurrent protection circuits, DC-AC inverters, switch-mode power supplies, power factor correction modules, motor drives, and induction heating.