DMTH64M2LPDW-13

Diodes Incorporated
621-DMTH64M2LPDW-13
DMTH64M2LPDW-13

製造商:

說明:
MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K

壽命週期:
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庫存:
0

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在途量:
2,500
預期27/3/2026
工廠前置作業時間:
24
工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$20.22 HK$20.22
HK$12.99 HK$129.90
HK$8.88 HK$888.00
HK$7.34 HK$3,670.00
HK$6.46 HK$6,460.00
完整捲(訂購多個2500)
HK$6.36 HK$15,900.00

商品屬性 屬性值 選擇屬性
Diodes Incorporated
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
PowerDI5060-8
N-Channel
2 Channel
60 V
90 A
7.8 mOhms
- 20 V, 20 V
2.2 V
48 nC
- 55 C
+ 175 C
74 W
Enhancement
Reel
Cut Tape
品牌: Diodes Incorporated
配置: Dual
下降時間: 38 ns
產品類型: MOSFETs
上升時間: 22 ns
系列: DMTH64M2LPDW
原廠包裝數量: 2500
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 55 ns
標準開啟延遲時間: 5.2 ns
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所選屬性: 0

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TARIC:
8541290000

DMTH64M2LPDW Dual N-Channel E-Mode MOSFET

Diodes Incorporated DMTH64M2LPDW Dual N-Channel Enhancement-Mode MOSFET is designed for high-efficiency power switching applications. DMTH64M2LPDW integrates two MOSFETs in a single PowerDI® 5mm x 6mm package, offering compact size and excellent thermal performance. Each channel features a low on-resistance [RDS(on)] and high current capability, ideal for synchronous rectification in DC-DC converters, power management in computing systems, and battery protection circuits. With a maximum drain-source voltage of 60V and continuous drain current up to 90A, this Diodes Inc device ensures fast switching and low conduction losses. The rugged design, combined with low gate charge and high avalanche energy rating, provides reliable operation in demanding environments such as server motherboards, graphics cards, and portable electronics.