Automotive COOLiRFET™ Power MOSFETs

Infineon Automotive COOLiRFET™ Power MOSFETs are specifically designed for Automotive applications. These HEXFET® Power MOSFETs utilize processing techniques that achieve low ON-resistance per silicon area. Additional features of this design are a +175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These devices offer low conduction losses and robust avalanche performance to deliver higher efficiency, power density, and reliability. With this performance, many applications using these COOLiRFET™ devices run significantly cooler than with state-of-the-art MOSFETs. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications.

結果: 4
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝
Infineon Technologies MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 741庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 120 A 2 mOhms - 20 V, 20 V 3 V 176 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 40V 90A D2PAK-2 OptiMOS-T2 971庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 90 A 2.1 mOhms - 20 V, 20 V 3 V 91 nC - 55 C + 175 C 150 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET_(20V,40V) 1,128庫存量
最少: 1
倍數: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 40 V 100 A 2.3 mOhms - 20 V, 20 V 2.2 V 45 nC - 55 C + 175 C 75 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(20V 40V) 無庫存前置作業時間 9 週
最少: 1
倍數: 1
: 1,000

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 240 A 1 mOhms - 20 V, 20 V 3 V 221 nC - 55 C + 175 C 231 W Enhancement AEC-Q101 Reel, Cut Tape